- Mesoporous silica films with varying porous volume fraction: Direct correlation between ortho-positronium annihilation decay and escape yield into vacuum
[作者:Liszkay, L; Corbel, C; Raboin, L; Boilot, JP; Perez, P; Brunet-Bruneau, A; Crivelli, P; Gendotti, U; Rubbia, A; Ohdaira, T; Suzuki, R,期刊:Applied Physics Letters, 页码:124103-124103 , 文章类型: Article,,卷期:2009年95-12]
- The behavior of ortho-positronium (o-Ps) in mesoporous silica films implanted with low-energy positrons has been studied as a function of the film porous volume fraction. A lifetime spectrometer allowed determination of ...
- Tunable magnetoelastic phononic crystals
[作者:Robillard, JF; Matar, OB; Vasseur, JO; Deymier, PA; Stippinger, M; Hladky-Hennion, AC; Pennec, Y; Djafari-Rouhani, B,期刊:Applied Physics Letters, 页码:124104-124104 , 文章类型: Article,,卷期:2009年95-12]
- The feasibility of tuning the band structure of phononic crystals is demonstrated by employing magnetostrictive materials and applying an external magnetic field. Band structures are calculated with a plane wave expansio...
- Comment on "Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods" [Appl. Phys. Lett. 94, 041906, (2009)]
[作者:Zou, CW; Bian, JM,期刊:Applied Physics Letters, 页码:126101-126101 , 文章类型: Editorial Material,,卷期:2009年95-12]
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- X-ray absorption study of the electronic structure of Mn-doped amorphous Si (vol 92, 142503, 2008)
[作者:Zeng, L; Huegel, A; Helgren, E; Hellman, F; Piamonteze, C; Arenholz, E,期刊:Applied Physics Letters, 页码:129901-129901 , 文章类型: Correction,,卷期:2009年95-12]
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- Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
[作者:Faure, S; Brimont, C; Guillet, T; Bretagnon, T; Gil, B; Medard, F; Lagarde, D; Disseix, P; Leymarie, J; Zuniga-Perez, J; Leroux, M; Frayssinet, E; Moreno, JC; Semond, F; Bouchoule, S,期刊:Applied Physics Letters, 页码:121102-121102 , 文章类型: Article,,卷期:2009年95-12]
- The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg...
- Enhanced absorption of metals over ultrabroad electromagnetic spectrum
[作者:Vorobyev, AY; Topkov, AN; Gurin, OV; Svich, VA; Guo, CL,期刊:Applied Physics Letters, 页码:121106-121106 , 文章类型: Article,,卷期:2009年95-12]
- Metals are usually highly reflective for electromagnetic waves, especially at far-infrared and terahertz frequencies. Using a femtosecond laser structuring technique, near-perfectly reflective metals are transformed to h...
- Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
[作者:Li, X; Ni, X; Lee, J; Wu, M; Ozgur, U; Morkoc, H; Paskova, T; Mulholland, G; Evans, KR,期刊:Applied Physics Letters, 页码:121107-121107 , 文章类型: Article,,卷期:2009年95-12]
- We investigated the internal quantum efficiency (IQE) and the relative external quantum efficiency (EQE) of m-plane InGaN light emitting diodes (LEDs) grown on m-plane freestanding GaN emitting at similar to 400 nm for c...
- Mach-Zehnder-Fano interferometer
[作者:Miroshnichenko, AE; Kivshar, YS,期刊:Applied Physics Letters, 页码:121109-121109 , 文章类型: Article,,卷期:2009年95-12]
- We introduce a concept of the Mach-Zehnder-Fano interferometer by inserting a cavity exhibiting Fano resonance into a conventional interferometer. By employing the scattering-matrix approach, we demonstrate that the tran...
- The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
[作者:Myers, S; Plis, E; Khoshakhlagh, A; Kim, HS; Sharma, Y; Dawson, R; Krishna, S; Gin, A,期刊:Applied Physics Letters, 页码:121110-121110 , 文章类型: Article,,卷期:2009年95-12]
- We have investigated the electrical and optical properties of a nBn based InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature dependent dark curre...
- Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
[作者:Yan, QM; Rinke, P; Scheffler, M; Van de Walle, CG,期刊:Applied Physics Letters, 页码:121111-121111 , 文章类型: Article,,卷期:2009年95-12]
- A systematic density functional theory study of strain effects on the electronic band structure of the group-III nitrides (AlN, GaN, and InN) is presented. To overcome the deficiencies of the local-density and generalize...
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