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Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

作者	Li, X; Ni, X; Lee, J; Wu, M; Ozgur, U; Morkoc, H; Paskova, T; Mulholland, G; Evans, KR

选自	期刊 Applied Physics Letters; 卷期 2009年95-12; 页码 121107-121107

关联知识点

[摘要]：We investigated the internal quantum efficiency (IQE) and the relative external quantum efficiency (EQE) of m-plane InGaN light emitting diodes (LEDs) grown on m-plane freestanding GaN emitting at similar to 400 nm for current densities up to 2500 A/cm(2)
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