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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共89条记录   The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy [作者：Lee, NJ; Yoo, JW; Choi, YJ; Kang, CJ; Jeon, DY; Kim, DC; Seo, S; Chung, HJ,期刊：Applied Physics Letters, 页码：222107-222107 , 文章类型： Article，,卷期：2009年95-22] We report on the interlayer screening effect of graphene using Kelvin probe force microscopy (KPFM). By using a gate device configuration that enables the supply of electronic carriers in graphene sheets, the vertical sc... Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature [作者：Sun, J; Wan, Q; Lu, AX; Jiang, J,期刊：Applied Physics Letters, 页码：222108-222108 , 文章类型： Article，,卷期：2009年95-22] Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (V-th=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room tem... Well-width dependence of valley splitting in Si/SiGe quantum wells [作者：Sasaki, K; Masutomi, R; Toyama, K; Sawano, K; Shiraki, Y; Okamoto, T,期刊：Applied Physics Letters, 页码：222109-222109 , 文章类型： Article，,卷期：2009年95-22] The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence o... Electric field driven quantum phase transition between band insulator and topological insulator [作者：Li, J; Chang, K,期刊：Applied Physics Letters, 页码：222110-222110 , 文章类型： Article，,卷期：2009年95-22] We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric fie... The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 [作者：McKenna, K; Shluger, A,期刊：Applied Physics Letters, 页码：222111-222111 , 文章类型： Article，,卷期：2009年95-22] The diffusion and segregation of oxygen vacancies near a grain boundary in m-HfO2 is investigated by first principles calculations. We find that both neutral and positive vacancies segregate to the grain boundary. Positi... Atomic nitrogen doping and p-type conduction in SnO2 [作者：Pan, SS; Li, GH; Wang, LB; Shen, YD; Wang, Y; Mei, T; Hu, X,期刊：Applied Physics Letters, 页码：222112-222112 , 文章类型： Article，,卷期：2009年95-22] We report the atomic N-doped SnO2 films with p-type conduction grown via reactive sputtering at high nitrogen partial pressure. From the high-resolution x-ray photoelectron spectroscopy (XPS) and x-ray diffraction patter... Carbon nanotube/nanodiamond structures: An innovative concept for stable and ready-to-start electron emitters [作者：Guglielmotti, V; Chieppa, S; Orlanducci, S; Tamburri, E; Toschi, F; Terranova, ML; Rossi, M,期刊：Applied Physics Letters, 页码：222113-222113 , 文章类型： Article，,卷期：2009年95-22] Efficient and robust cold cathodes have been assembled using as emitting material mats of single wall carbon nanotubes (SWCNTs) coated with nanodiamonds. The preparation of the hybrid nanotube/nanodiamond structures by c... Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3 [作者：Scherwitzl, R; Zubko, P; Lichtensteiger, C; Triscone, JM,期刊：Applied Physics Letters, 页码：222114-222114 , 文章类型： Article，,卷期：2009年95-22] Epitaxial ultrathin films of the metallic perovskite LaNiO3 were grown on (001) SrTiO3 substrates using off-axis rf magnetron sputtering. The film structure was characterized and their electrical properties investigated.... Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing [作者：Shin, IJ; Min, BC; Hong, JP; Shin, KH,期刊：Applied Physics Letters, 页码：222501-222501 , 文章类型： Article，,卷期：2009年95-22] We study the effect of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by high-temperature in situ annealing above 400 degrees C, circumventing Mn diffusion conventionally caused by postannealing p... Controlled reversal of coupled Neacuteel walls in flux-closure magnetic trilayer elements [作者：Huang, L; Zhu, Y,期刊：Applied Physics Letters, 页码：222502-222502 , 文章类型： Article，,卷期：2009年95-22] We report the detailed field-induced transformation of coupled Neacuteel walls in micron-sized trilayer elliptical elements for novel domain-wall-based device applications. Using in situ Lorentz transmission electron mic... Ferrimagnetism in epitaxially grown Mn2VAl Heusler alloy investigated by means of soft x-ray magnetic circular dichroism [作者：Kubota, T; Kodama, K; Nakamura, T; Sakuraba, Y; Oogane, M; Takanashi, K; Ando, Y,期刊：Applied Physics Letters, 页码：222503-222503 , 文章类型： Article，,卷期：2009年95-22] Epitaxially grown Mn2VAl films were fabricated on MgO (001) single crystalline substrates by using a sputtering technique. The resulting Mn2VAl films with substrate temperatures of T-s=500 and 600 degrees C showed an L2(... Flux growth at ambient pressure of millimeter-sized single crystals of LaFeAsO, LaFeAsO1-xFx, and LaFe1-xCoxAsO [作者：Yan, JQ; Nandi, S; Zarestky, JL; Tian, W; Kreyssig, A; Jensen, B; Kracher, A; Dennis, KW; McQueeney, RJ; Goldman, AI; McCallum, RW; Lograsso, TA,期刊：Applied Physics Letters, 页码：222504-222504 , 文章类型： Article，,卷期：2009年95-22] Millimeter-sized single crystals of LaFeAsO, LaFeAsO1-xFx, and LaFe1-xCoxAsO were grown in NaAs flux at ambient pressure. The detailed growth procedure and crystal characterizations are reported. The as-grown crystals ha... Temperature dependence of competition between interlayer and interfacial exchange couplings in ferromagnetic/antiferromagnetic/ferromagnetic trilayers [作者：Liu, XH; Liu, W; Yang, F; Lv, XK; Cui, WB; Guo, S; Gong, WJ; Zhang, ZD,期刊：Applied Physics Letters, 页码：222505-222505 , 文章类型： Article，,卷期：2009年95-22] The competition between interlayer and interfacial exchange couplings is found to be temperature dependent in Co(3 nm)/AF/Fe(10 nm) trilayers with AF equivalent to antiferromagnetic NiO, Cr2O3 or Cr. The temperature depe... Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer [作者：Fowley, C; Chun, BS; Wu, HC; Abid, M; Cho, JU; Noh, SJ; Kim, YK; Shvets, IV; Coey, JMD,期刊：Applied Physics Letters, 页码：222506-222506 , 文章类型： Article，,卷期：2009年95-22] We report an oscillation of the giant magnetoresistance (GMR) ratio as a function of Ru layer thickness in the CoFe/Cu/[CoFe/Ru/CoFe]SAF/Cu/CoFe/IrMn dual spin valve (SV) structure. A normal GMR with a positive sign is o... Revealing the reversible rotation of magnetization in exchange-coupled composite media switching [作者：Hauet, T; Florez, S; Margulies, D; Ikeda, Y; Lengsfield, B; Supper, N; Takano, K; Hellwig, O; Terris, BD,期刊：Applied Physics Letters, 页码：222507-222507 , 文章类型： Article，,卷期：2009年95-22] We present a study of the magnetic reversal mechanism for exchange coupled composite perpendicular media, i.e., hard granular layer/exchange-coupling layer (ECL)/soft layer (SL) systems, without soft underlayer. Using a ... An ac field probe for the magnetic ordering of magnets with random anisotropy [作者：Nguyen, HM; Hsiao, PY,期刊：Applied Physics Letters, 页码：222508-222508 , 文章类型： Article，,卷期：2009年95-22] A Monte Carlo simulation is carried out to investigate the magnetic ordering in magnets with random anisotropy (RA). Our results show peculiar similarities to recent experiments that the real part of ac susceptibility pr...