Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

[摘要]：Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (V-th=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is

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