- Tailoring light emission properties of organic emitter by coupling to resonance-tuned silver nanoantenna arrays
[作者:Qiu, T; Kong, F; Yu, XQ; Zhang, WJ; Lang, XZ; Chu, PK,期刊:Applied Physics Letters, 页码:213104-213104 , 文章类型: Article,,卷期:2009年95-21]
- A convenient nanotechnique is reported to tailor the light emission properties of organic emitter poly[2-methoxy-5-(2(')-ethyl-hexyloxy)-p-phenylene vinylene] (MEH-PPV) by coupling to resonance-tuned silver nanoantenna a...
- Grain size dependence of electrical and optical properties in Nb-doped anatase TiO2
[作者:Yang, JY; Li, WS; Li, H; Sun, Y; Dou, RF; Xiong, CM; He, L; Nie, JC,期刊:Applied Physics Letters, 页码:213105-213105 , 文章类型: Article,,卷期:2009年95-21]
- Anatase thin films of pure TiO2 and 6% niobium doped TiO2 (Nb:TiO2) were fabricated on LaAlO3(100) by pulsed laser deposition. The electrical properties of Nb:TiO2 films are grain-size dependent, i.e., the larger grain s...
- Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates
[作者:Ben-Sasson, AJ; Avnon, E; Ploshnik, E; Globerman, O; Shenhar, R; Frey, GL; Tessler, N,期刊:Applied Physics Letters, 页码:213301-213301 , 文章类型: Article,,卷期:2009年95-21]
- We report the design and implementation of a vertical organic field effect transistor which is compatible with standard device fabrication technology and is well described by a self consistent device model. The active se...
- C-60 cluster formation at interfaces with pentacene thin-film phases
[作者:Conrad, BR; Tosado, J; Dutton, G; Dougherty, DB; Jin, W; Bonnen, T; Schuldenfrei, A; Cullen, WG; Williams, ED; Reutt-Robey, JE; Robey, SW,期刊:Applied Physics Letters, 页码:213302-213302 , 文章类型: Article,,卷期:2009年95-21]
- The C-60-thin film pentacene interface was investigated using scanning tunneling microscopy, atomic force microscopy, and ultraviolet photoemission spectroscopy. C-60 deposition on a multilayer pentacene film (standing) ...
- Solution-processed conjugated polymer organic p-i-n light-emitting diodes with high built-in potential by solution- and solid-state doping
[作者:Sivaramakrishnan, S; Zhou, M; Kumar, AC; Chen, ZL; Png, RQ; Chua, LL; Ho, PKH,期刊:Applied Physics Letters, 页码:213303-213303 , 文章类型: Article,,卷期:2009年95-21]
- Polymer p-i-n homojunction light-emitting diodes (LEDs) comprising p-doped poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) hole-injection, intrinsic F8BT emitter, and n-doped F8BT electron-injection layers have been de...
- Magnetoelectroluminescence in tris (8-hydroxyquinolato) aluminum-based organic light-emitting diodes doped with fluorescent dyes
[作者:Chen, P; Lei, YL; Song, QL; Zhang, Y; Liu, R; Zhang, QM; Xiong, ZH,期刊:Applied Physics Letters, 页码:213304-213304 , 文章类型: Article,,卷期:2009年95-21]
- The influences of fluorescent dye doping on the magnetoelectroluminescence in tris (8-hydroxyquinolato) aluminum (Alq(3))-based organic light-emitting diodes have been investigated systematically by varying the dopant co...
- Highly efficient yellow organic light emitting diode based on a layer-cross faded emission layer allowing easy color tuning
[作者:Lindla, F; Boesing, M; Zimmermann, C; Jessen, F; van Gemmern, P; Bertram, D; Keiper, D; Meyer, N; Heuken, M; Kalisch, H; Jansen, RH,期刊:Applied Physics Letters, 页码:213305-213305 , 文章类型: Article,,卷期:2009年95-21]
- An easy way to adjust the color of yellow organic light emitting diodes (OLED) is realized by basing the emission layer on a cross-fading zone of two unipolar-conducting host materials doping parts of it either with a re...
- Efficient semitransparent small-molecule organic solar cells
[作者:Meiss, J; Leo, K; Riede, MK; Uhrich, C; Gnehr, WM; Sonntag, S; Pfeiffer, M,期刊:Applied Physics Letters, 页码:213306-213306 , 文章类型: Article,,卷期:2009年95-21]
- We present semitransparent small-molecule organic solar cells (OSC) deposited by thermal evaporation onto indium tin oxide (ITO)-coated glass substrates. The devices employ ITO-free ultrathin metal layers as top electrod...
- Increasing organic vertical carrier mobility for the application of high speed bilayered organic photodetector
[作者:Tsai, WW; Chao, YC; Chen, EC; Zan, HW; Meng, HF; Hsu, CS,期刊:Applied Physics Letters, 页码:213308-213308 , 文章类型: Article,,卷期:2009年95-21]
- The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole m...
- Wide dynamic range terahertz detector pixel for active spectroscopic imaging with quantum cascade lasers
[作者:Cibella, S; Ortolani, M; Leoni, R; Torrioli, G; Mahler, L; Xu, JH; Tredicucci, A; Beere, HE; Ritchie, DA,期刊:Applied Physics Letters, 页码:213501-213501 , 文章类型: Article,,卷期:2009年95-21]
- A superconducting bolometer with an on-chip lithographic terahertz antenna has been illuminated by two quantum cascade lasers operating at 2.5 and 4.4 THz. The detector displays a 1.2 mu s time constant, a noise equivale...
- Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S-2 based solar cells
[作者:Merdes, S; Saez-Araoz, R; Ennaoui, A; Klaer, J; Lux-Steiner, MC; Klenk, R,期刊:Applied Physics Letters, 页码:213502-213502 , 文章类型: Article,,卷期:2009年95-21]
- Progress in fabricating Cu(In,Ga)S-2 based solar cells with Zn(S,O) buffer is presented. An efficiency of 12.9% was achieved. Using spectral response, current-voltage and temperature dependent current-voltage measurement...
- Analog memory capacitor based on field-configurable ion-doped polymers
[作者:Lai, QX; Zhang, L; Li, ZY; Stickle, WF; Williams, RS; Chen, Y,期刊:Applied Physics Letters, 页码:213503-213503 , 文章类型: Article,,卷期:2009年95-21]
- A memory capacitor based on a field-configurable ion-doped polymer is reported. The device can be dynamically and reversibly programed to analog capacitances with low-voltage (< 5 V) pulses. After the device is programed...
- Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
[作者:Ghoneim, H; Knoch, J; Riel, H; Webb, D; Bjork, MT; Karg, S; Lortscher, E; Schmid, H; Riess, W,期刊:Applied Physics Letters, 页码:213504-213504 , 文章类型: Article,,卷期:2009年95-21]
- We present a study on suppressing the ambipolar behavior of Schottky barrier metal-oxide-semiconductor field-effect transistors (MOSFET). Inserting a silicon nitride layer of appropriate thickness between the metallic so...
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