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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共110条记录   On the use of a chaotic cavity transducer in nonlinear elastic imaging [作者：Matar, OB; Li, YF; Van Den Abeele, K,期刊：Applied Physics Letters, 页码：141913-141913 , 文章类型： Article，,卷期：2009年95-14] We discuss the advantages of "chaotic cavity transducer focusing" to enhance the localization of microdamage in conjunction with nonlinear elastic wave spectroscopy methods. Chaotic cavity transducer focusing is defined ... Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n(+) structure [作者：Lin, KI; Lin, HC; Tsai, JT; Cheng, CS; Lu, YT; Hwang, JS; Chiu, PC; Chen, SH; Chyi, JI; Wang, TS,期刊：Applied Physics Letters, 页码：141914-141914 , 文章类型： Article，,卷期：2009年95-14] Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65Sb0.35 surface intrinsic-n(+) (SIN+) structure. Based on the thermionic emission theory and curr... Atomically flat SrO-terminated SrTiO3(001) substrate [作者：Bachelet, R; Sanchez, F; Palomares, FJ; Ocal, C; Fontcuberta, J,期刊：Applied Physics Letters, 页码：141915-141915 , 文章类型： Article，,卷期：2009年95-14] We show that atomically flat single SrO-terminated SrTiO3(001) substrates can be obtained through simple high-temperature treatment. Amplitude-modulation atomic force microscopy with phase-lag analysis and x-ray photoele... Time-dependent electroforming in NiO resistive switching devices [作者：Buh, GH; Hwang, I; Park, BH,期刊：Applied Physics Letters, 页码：142101-142101 , 文章类型： Article，,卷期：2009年95-14] Time-dependent electroforming phenomena in NiO capacitors are investigated. Different current-voltage characteristics between dc sweep mode and pulse mode indicate that electroforming is time-dependent process. Statistic... Physical analysis of thermal effects on the optimization of GaN Gunn diodes [作者：Tang, X; Rousseau, M; Dalle, C; De Jaeger, JC,期刊：Applied Physics Letters, 页码：142102-142102 , 文章类型： Article，,卷期：2009年95-14] This letter describes the analysis of GaN Gunn oscillations by means of a physical-thermal modeling based on the coupling of an energy-balance model for the description of electron transport in the active area with a the... Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors [作者：Tang, CJ; Wang, TH; Chang, CS,期刊：Applied Physics Letters, 页码：142103-142103 , 文章类型： Article，,卷期：2009年95-14] Quantum confinement effects on hole mobility in silicon and germanium double gate p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and chan... Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices [作者：Goh, KEJ; Simmons, MY,期刊：Applied Physics Letters, 页码：142104-142104 , 文章类型： Article，,卷期：2009年95-14] We address the impact of Si growth rate on electron transport in Si: P delta-doped devices encapsulated by low temperature Si molecular beam epitaxy. Si growth rates ranging from 0.05 to 2.2 angstrom s(-1) were used in c... Magnetoresistance of CdSe/CdS quantum dot films [作者：Pourret, A; Ramirez, A; Guyot-Sionnest, P,期刊：Applied Physics Letters, 页码：142105-142105 , 文章类型： Article，,卷期：2009年95-14] Films of n-type CdSe/CdS colloidal quantum dots show positive and negative magnetoresistance (MR) with magnetic field lower than 0.4 T. The MR sign and magnitude vary with the occupancy of the lowest state, the temperatu... UV-activated room-temperature gas sensing mechanism of polycrystalline ZnO [作者：Fan, SW; Srivastava, AK; Dravid, VP,期刊：Applied Physics Letters, 页码：142106-142106 , 文章类型： Article，,卷期：2009年95-14] The effects of UV illumination on the electronic properties and gas sensing performance of ZnO are reported. It is found that UV light improves the sensitivity and the sensor response and recovery rate. By investigating ... Unusual transport behavior of the SrTiO3-based homojunctions [作者：Lu, WM; Sun, JR; Wang, J; Shen, BG,期刊：Applied Physics Letters, 页码：142107-142107 , 文章类型： Article，,卷期：2009年95-14] Two homojunctions composed of La0.15Sr0.85TiO3 films and SrTiO3:Nb substrates have been fabricated in the oxygen atmospheres of 10 and 20 Pa, respectively, and their transport behaviors are studied in the temperature ran... Spectral dependence of time-resolved photoreflectance of InN epitaxial films [作者：Tsai, TR; Chang, CY; Kuo, CW; Hwang, JS; Lin, TY; Gwo, S,期刊：Applied Physics Letters, 页码：142108-142108 , 文章类型： Article，,卷期：2009年95-14] Femtosecond pulses at wavelengths ranging from 750 to 900 nm (1.38-1.65 eV) were used in the excitation and probing of ultrafast carrier dynamics in InN epitaxial films. Experimental results show that the hot electron re... Nitrogen-polar gallium nitride substrates as solid-state pH-selective potentiometric sensors [作者：Ba, KHT; Mastro, MA; Hite, JK; Eddy, CR; Ito, T,期刊：Applied Physics Letters, 页码：142501-142501 , 文章类型： Article，,卷期：2009年95-14] This paper reports pH-selective potentiometric responses of epitaxial nitrogen-polar (0001) GaN films on sapphire substrates. The potential of a nitrogen-polar GaN substrate increased with decreasing solution pH from 10 ... Intergrain current flow in a randomly oriented polycrystalline SmFeAsO0.85 oxypnictide [作者：Kametani, F; Li, P; Abraimov, D; Polyanskii, AA; Yamamoto, A; Jiang, J; Hellstrom, EE; Gurevich, A; Larbalestier, DC; Ren, ZA; Yang, J; Dong, XL; Lu, W; Zhao, ZX,期刊：Applied Physics Letters, 页码：142502-142502 , 文章类型： Article，,卷期：2009年95-14] We report a direct current transport study of the local intergrain connections in a polycrystalline SmFeAsO0.85 (Sm1111) bulk, for which we earlier estimated significant intergranular critical current density J(c). Our c... Pressure-induced superconductivity in boron-doped Buckypapers [作者：Nakamura, J; Matsudaira, M; Haruyama, J; Sugiura, H; Tachibana, M; Reppert, J; Rao, A; Nishio, T; Hasegawa, Y; Sano, H; Iye, Y,期刊：Applied Physics Letters, 页码：142503-142503 , 文章类型： Article，,卷期：2009年95-14] We show creation of paperlike thin film (Buckypaper) consisting of pseudo-two-dimensional network of boron-doped single-walled carbon nanotubes (B-SWNTs) within weakly intertube van der Waals coupling (IVDWC) state. It w...