Spectral dependence of time-resolved photoreflectance of InN epitaxial films

[摘要]：Femtosecond pulses at wavelengths ranging from 750 to 900 nm (1.38-1.65 eV) were used in the excitation and probing of ultrafast carrier dynamics in InN epitaxial films. Experimental results show that the hot electron relaxation rate increases with increa

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