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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共110条记录   3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach [作者：Lyakh, A; Maulini, R; Tsekoun, A; Go, R; Pflugl, C; Diehl, L; Wang, QJ; Capasso, F; Patel, CKN,期刊：Applied Physics Letters, 页码：141113-141113 , 文章类型： Article，,卷期：2009年95-14] A strain-balanced, InP-based quantum cascade laser structure, designed for light emission at 4.6 mu m using a new nonresonant extraction design approach, was grown by molecular beam epitaxy. Removal of the restrictive tw... A surface-emitting distributed-feedback plasmonic laser [作者：Li, XF; Yu, SF; Kumar, A,期刊：Applied Physics Letters, 页码：141114-141114 , 文章类型： Article，,卷期：2009年95-14] A surface-plasmon polariton (SPP) waveguide, which is composed of a high-index decoupling layer for the excitation of surface emission, a metal grating layer to achieve coherent optical feedback and guiding of SPP waves ... Empirical electron cross-field mobility in a Hall effect thruster [作者：Garrigues, L; Perez-Luna, J; Lo, J; Hagelaar, GJM; Boeuf, JP; Mazouffre, S,期刊：Applied Physics Letters, 页码：141501-141501 , 文章类型： Article，,卷期：2009年95-14] Electron transport across the magnetic field in Hall effect thrusters is still an open question. Models have so far assumed 1/B-2 or 1/B scaling laws for the "anomalous" electron mobility, adjusted to reproduce the integ... Effects of gas flow rate on the length of atmospheric pressure nonequilibrium plasma jets [作者：Li, Q; Li, JT; Zhu, WC; Zhu, XM; Pu, YK,期刊：Applied Physics Letters, 页码：141502-141502 , 文章类型： Article，,卷期：2009年95-14] Effects of gas flow rate on the length of atmospheric pressure plasma jets have been investigated using a capillary dielectric barrier discharge configuration. For the discharge in only downstream region, three distingui... Phase separation in GaN/AlGaN quantum dots [作者：Benaissa, M; Gu, L; Korytov, M; Huault, T; van Aken, PA; Brault, J; Vennegues, P,期刊：Applied Physics Letters, 页码：141901-141901 , 文章类型： Article，,卷期：2009年95-14] Local investigations using high-angle annular-dark-field imaging combined with electron low-energy-loss spectroscopy were performed to closely characterize the GaN/Al0.5Ga0.5N quantum dots heterostructure. It is found th... Equation of state for gadolinium gallium garnet crystals: Experimental and computational study [作者：Durygin, A; Drozd, V; Paszkowicz, W; Werner-Malento, E; Buczko, R; Kaminska, A; Saxena, S; Suchocki, A,期刊：Applied Physics Letters, 页码：141902-141902 , 文章类型： Article，,卷期：2009年95-14] Experimentally and theoretically determined elastic properties of gadolinium gallium garnet, Gd3Ga5O12, under high-pressure are reported. The x-ray diffraction part of the study was performed using a diamond-anvil cell a... Identification of nitrogen and zinc related vibrational modes in ZnO [作者：Friedrich, F; Gluba, MA; Nickel, NH,期刊：Applied Physics Letters, 页码：141903-141903 , 文章类型： Article，,卷期：2009年95-14] Zinc oxide films with natural zinc and isotopically pure Zn-68 were grown by pulsed laser deposition on sapphire substrates. Prior to and after ion implantation with N2+ the samples were characterized with Raman spectros... First principles calculation of the thermal conductance of GaN/Si and GaN/SiC interfaces as functions of the interface conditions [作者：Kazan, M,期刊：Applied Physics Letters, 页码：141904-141904 , 文章类型： Article，,卷期：2009年95-14] First principles calculation and a statistical model are employed to calculate the thermal conductance (TC) of the interfaces GaN/Si and GaN/SiC. For an interface with zero tangential correlation length (L), TC of both G... Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate [作者：Tanoto, H; Yoon, SF; Lew, KL; Loke, WK; Dohrman, C; Fitzgerald, EA; Tang, LJ,期刊：Applied Physics Letters, 页码：141905-141905 , 文章类型： Article，,卷期：2009年95-14] We studied the electroluminescence and structural characteristics of five-layer stacked self-assembled InAs/In0.1Ga0.9As quantum dot (QD) structures grown on graded Si1-xGex/Si substrate. The QD was found to take on a le... Measurement of the lattice plane strain and phase fraction evolution during heating and cooling in shape memory NiTi [作者：Qiu, S; Krishnan, VB; Padula, SA; Noebe, RD; Brown, DW; Clausen, B; Vaidyanathan, R,期刊：Applied Physics Letters, 页码：141906-141906 , 文章类型： Article，,卷期：2009年95-14] We report on in situ neutron diffraction measurements during heating and cooling through the phase transformation in shape memory NiTi. The lattice plane specific strain evolution remains linear with temperature and is n... Azimuth dependent reflection anisotropy of oriented thin films [作者：Lane, PD; Isted, GE; Roseburgh, DS; Cole, RJ,期刊：Applied Physics Letters, 页码：141907-141907 , 文章类型： Article，,卷期：2009年95-14] A simplified mathematical description of reflection anisotropy spectroscopy (RAS) measurements is presented. The RAS signals of a nanometer film with arbitrarily aligned dielectric axes are investigated. While RAS spectr... Magnetocaloric effect linked to the martensitic transformation in sputter-deposited Ni-Mn-Ga thin films [作者：Recarte, V; Perez-Landazabal, JI; Sanchez-Alarcos, V; Chernenko, VA; Ohtsuka, M,期刊：Applied Physics Letters, 页码：141908-141908 , 文章类型： Article，,卷期：2009年95-14] In this letter, the analysis of the magnetocaloric effect (MCE) in a thin film of Ni-Mn-Ga alloy sputter deposited on alumina substrate is reported. This film has 0.4 mu m thickness and exhibits merged martensitic and fe... Correlation between structural relaxation and shear transformation zone volume of a bulk metallic glass [作者：Pan, D; Yokoyama, Y; Fujita, T; Liu, YH; Kohara, S; Inoue, A; Chen, MW,期刊：Applied Physics Letters, 页码：141909-141909 , 文章类型： Article，,卷期：2009年95-14] The effect of structural relaxation on shear transformation zones (STZs) in a Zr70Ni16Cu6Al8 glassy alloy is evaluated. Upon annealing, the measured STZ size dramatically decreases with moderate augment of mass density c... Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices [作者：Martin, M; Mangeney, J; Travers, L; Minot, C; Harmand, JC; Mauguin, O; Patriarche, G,期刊：Applied Physics Letters, 页码：141910-141910 , 文章类型： Article，,卷期：2009年95-14] We study GaInAs/GaInNAs superlattice structures grown on InP substrate as potential candidates for photoconductive terahertz devices or saturable absorbers working at 1.55 mu m wavelength. The N-rich GaInNAs layers are f... Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates [作者：Kandaswamy, PK; Machhadani, H; Bougerol, C; Sakr, S; Tchernycheva, M; Julien, FH; Monroy, E,期刊：Applied Physics Letters, 页码：141911-141911 , 文章类型： Article，,卷期：2009年95-14] We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption... A stretchable temperature sensor based on elastically buckled thin film devices on elastomeric substrates [作者：Yu, CJ; Wang, ZY; Yu, HY; Jiang, HQ,期刊：Applied Physics Letters, 页码：141912-141912 , 文章类型： Article，,卷期：2009年95-14] Stretchable electronics and sensors have been attracting significant attention due to their unique characteristics and wide applications. This letter presents a prototype of a fully stretchable temperature sensor on an e...