Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices

[摘要]：We study GaInAs/GaInNAs superlattice structures grown on InP substrate as potential candidates for photoconductive terahertz devices or saturable absorbers working at 1.55 mu m wavelength. The N-rich GaInNAs layers are flat, with no three-dimensional isla

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