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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共90条记录   Single spin transport spectroscopy: Current blockade and spin decay [作者：Kiesslich, G; Schaller, G; Emary, C; Brandes, T,期刊：Applied Physics Letters, 页码：152104-152104 , 文章类型： Article，,卷期：2009年95-15] We present a theory of a single-electron transistor exchange-coupled to a localized spin. We show how to gain detailed quantitative knowledge about the attached spin such as spin size, exchange coupling strength, Lande g... Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium [作者：Pan, XH; Guo, W; Ye, ZZ; Liu, B; Che, Y; Tian, W; Schlom, DG; Pan, XQ,期刊：Applied Physics Letters, 页码：152105-152105 , 文章类型： Article，,卷期：2009年95-15] This work discusses the effect of conduction-band edge shift induced by alloying ZnO with magnesium. Temperature-dependent Hall and temperature-dependent photoluminescence measurements are used to characterize the epitax... Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3 [作者：Peng, HY; Wu, T,期刊：Applied Physics Letters, 页码：152106-152106 , 文章类型： Article，,卷期：2009年95-15] We report that spinel ZnMn2O4 and ilmenite ZnMnO3 show excellent unipolar resistive switching behaviors, with ON/OFF ratios larger than 10(4). For both oxides, retention of more than 10 h and good endurance are achieved.... Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors [作者：Ma, XH; Cao, YR; Gao, HX; Chen, HF; Hao, Y,期刊：Applied Physics Letters, 页码：152107-152107 , 文章类型： Article，,卷期：2009年95-15] The behaviors of the gate induced drain leakage (GIDL) stress during the single and alternating stresses were investigated. A combination of threshold voltage V-th and GIDL current I-gidl has been applied to investigate ... Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa [作者：Grivickas, P; McCluskey, MD; Gupta, YM,期刊：Applied Physics Letters, 页码：152108-152108 , 文章类型： Article，,卷期：2009年95-15] Real time changes of the GaAs band structure were determined using time-resolved photoluminescence (PL) spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression... Measurements of current-voltage-induced heating in the Al/SrTiO3-xNy/Al memristor during electroformation and resistance switching [作者：Shkabko, A; Aguirre, MH; Marozau, I; Lippert, T; Weidenkaff, A,期刊：Applied Physics Letters, 页码：152109-152109 , 文章类型： Article，,卷期：2009年95-15] Heating of the Al/SrTiO3-xNy/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode wit... Chemical stability and transport properties of ultrathin La1.2Sr1.8Mn2O7 Ruddlesden-Popper films [作者：Matvejeff, M; Yoshimatsu, K; Kumigashira, H; Oshima, M; Lippmaa, M,期刊：Applied Physics Letters, 页码：152110-152110 , 文章类型： Article，,卷期：2009年95-15] Epitaxial La1.2Sr1.8Mn2O7 films with n=2 Ruddlesden-Popper structure were grown on SrTiO3 (001) substrates. Decomposition through water intercalation led to the disappearance of the metal-insulator transition in samples ... Role of copper in light induced minority-carrier lifetime degradation of silicon [作者：Savin, H; Yli-Koski, M; Haarahiltunen, A,期刊：Applied Physics Letters, 页码：152111-152111 , 文章类型： Article，,卷期：2009年95-15] We investigate the impact of copper on the light induced minority-carrier lifetime degradation in various crystalline silicon materials. We demonstrate here that the presence of neither boron nor oxygen is necessary for ... Characterization of electrical conductivity in a zeolitelike material [作者：Soghomonian, V; Heremans, JJ,期刊：Applied Physics Letters, 页码：152112-152112 , 文章类型： Article，,卷期：2009年95-15] We present the electrical characterization of a zeolitelike oxo-vanadium arsenate framework. The experimentally obtained electronic and ionic conductivities and their interactions are discussed. Further, we investigate t... High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric [作者：Lichtenwalner, DJ; Misra, V; Dhar, S; Ryu, SH; Agarwal, A,期刊：Applied Physics Letters, 页码：152113-152113 , 文章类型： Article，,卷期：2009年95-15] Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO2 covered ... Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperature [作者：Jiang, J; Wan, Q; Sun, J; Lu, AX,期刊：Applied Physics Letters, 页码：152114-152114 , 文章类型： Article，,卷期：2009年95-15] Electric-double-layer effect is observed in mesoporous SiO2 films deposited by plasma-enhanced chemical vapor deposition at room temperature. Room-temperature processed transparent InGaZnO4 thin film transistors (TFTs) g... Modeling spin transport with current-sensing spin detectors [作者：Li, J; Appelbaum, I,期刊：Applied Physics Letters, 页码：152501-152501 , 文章类型： Article，,卷期：2009年95-15] By incorporating the proper boundary conditions, we analytically derive the impulse response (or "Green's function") of a current-sensing spin detector. We also compare this result to a Monte Carlo simulation (which auto... Epitaxial-strain effect on charge/orbital order in Pr0.5Ca0.5MnO3 films [作者：Okuyama, D; Nakamura, M; Wakabayashi, Y; Itoh, H; Kumai, R; Yamada, H; Taguchi, Y; Arima, T; Kawasaki, M; Tokura, Y,期刊：Applied Physics Letters, 页码：152502-152502 , 文章类型： Article，,卷期：2009年95-15] Effect of growth orientation on charge- and orbital-ordering (CO-OO) phenomena has been studied for Pr0.5Ca0.5MnO3 epitaxial thin films fabricated on (LaAlO3)(0.3)-(SrAl0.5Ta0.5O3)(0.7) (LSAT) substrates by means of resi... Ni-Mn-In-Co single-crystalline particles for magnetic shape memory composites [作者：Liu, J; Scheerbaum, N; Weiss, S; Gutfleisch, O,期刊：Applied Physics Letters, 页码：152503-152503 , 文章类型： Article，,卷期：2009年95-15] Single- and oligo-crystalline magnetic shape memory (MSM) Ni45.2Mn36.7In13Co5.1 particles were prepared by mechanical grinding the melt-spun ribbons. The influence of annealing and grinding on the crystal structure and m... Magnetism of single-crystalline Co nanorods [作者：Soulantica, K; Wetz, F; Maynadie, J; Falqui, A; Tan, RP; Blon, T; Chaudret, B; Respaud, M,期刊：Applied Physics Letters, 页码：152504-152504 , 文章类型： Article，,卷期：2009年95-15] We report on the synthesis and preparation of oriented nanomaterials of single crystalline metallic Co nanorods of 6 nm in diameters and two different aspect ratios (7 and 15). They display optimized magnetic properties,... Magnetic domain wall pinning by a curved conduit [作者：Lewis, ER; Petit, D; Thevenard, L; Jausovec, AV; O'Brien, L; Read, DE; Cowburn, RP,期刊：Applied Physics Letters, 页码：152505-152505 , 文章类型： Article，,卷期：2009年95-15] The pinning of a magnetic domain wall in a curved Permalloy (NiFe) nanostrip is experimentally studied. We examine the dependence of the pinning on both the radius of curvature of the bend and the chirality of the transv...