- High-Performance Double-Channel Poly-Silicon Thin-Film Transistor With Raised Drain and Reduced Drain Electric Field Structures
[作者:Chien, FT; Liao, CN; Fang, CM; Tsai, YT,期刊:IEEE Transactions on Computers, 页码:441-447 , 文章类型: Article,,卷期:2009年56-3]
- In this paper, a high-performance single-gate double-channel polycrystalline-silicon thin-film transistor (DCTFT) is proposed and experimentally demonstrated for the first time. Two thin channels, accompanied with a rais...
- A Novel Low-Cost Trigate Process Suitable for Embedded CMOS 1T-1C Pseudo-SRAM Application
[作者:Zaman, RJ; Matthews, K; Hasan, MM; Xiong, WZ; Register, LF; Banerjee, SK,期刊:IEEE Transactions on Computers, 页码:448-455 , 文章类型: Article,,卷期:2009年56-3]
- A novel trigate process is described in this paper for low-cost embedded CMOS-based one transistor-one capacitor (1T-1C) pseudo-static-random-access-memory (pseudo-SRAM) applications. By utilizing hydrogen anneal and a s...
- The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications
[作者:Cristoloveanu, S; Rao, TVC; Nguyen, QT; Antoszewski, J; Hovel, H; Gentil, P; Faraone, L,期刊:IEEE Transactions on Computers, 页码:474-482 , 文章类型: Article,,卷期:2009年56-3]
- We propose the combination of magnetoresistance (MR) and Pseudo-MOSFET (Psi-MOSFET) measurements as an improved method for the characterization of silicon-on-insulator (SOI) materials. Measurements were performed on ultr...
- Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors
[作者:La Spina, L; d'Alessandro, V; Russo, S; Rinaldi, N; Nanver, LK,期刊:IEEE Transactions on Computers, 页码:483-491 , 文章类型: Article,,卷期:2009年56-3]
- The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transist...
- Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs
[作者:Wang, L; Wang, J; Gao, C; Hu, J; Li, P; Li, WJ; Yang, SHY,期刊:IEEE Transactions on Computers, 页码:492-498 , 文章类型: Article,,卷期:2009年56-3]
- This paper presents a physical description of two specific aspects in drain-extended MOS transistors, i.e., quasi-saturation and impact-ionization effects. The 2-D device simulator Medici provides the physical insights, ...
- Comparison of Long-Wave Infrared Quantum-Dots-in-a-Well and Quantum-Well Focal Plane Arrays
[作者:Andrews, JR; Restaino, SR; Vandervelde, TE; Brown, JS; Sharma, YD; Lee, SJ; Teare, SW; Reisinger, A; Sundaram, M; Krishna, S,期刊:IEEE Transactions on Computers, 页码:512-516 , 文章类型: Article,,卷期:2009年56-3]
- This paper reports on a comparison between a commercially available quantum-well infrared focal plane array (FPA) and a custom quantum-dot (QD)-in-a-well (DWELL) infrared FPA in the long-wave infrared (LWIR). The DWELL d...
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