[摘要]：This brief reports the experimentally measured strain effect on electron and hole transport in < 110 >-oriented FinFETs. To separate out the series-resistance component, the low drain-bias resistance is differentiated with respect to the gate voltage. It is found that the hole mobility is enhanced while the electron mobility reduced toward short-channel devices. This effect is attributed to the gate-length-dependent strain in FinFET device structures.
