个性化文献订阅>文章检索

文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共20条记录   materials Advances for Next-Generation Microelectronics - Introduction [作者：Clarke, DR; Ruhle, M,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：V-VII , 文章类型： Editorial Material，,卷期：2009年39-1] Molecular Electronics [作者：Heath, JR,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：1-23 , 文章类型： Review，,卷期：2009年39-1] Molecular electronics describes the field in which molecules are utilized as the active (switching, sensing, etc.) or passive (current rectifiers, surface passivants) elements in electronic devices. This review focuses o... Phase Change Materials [作者：Raoux, S,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：25-48 , 文章类型： Review，,卷期：2009年39-1] Phase change materials (PCMs) can exist in at least two different phases (an amorphous and one or more crystalline phases), and they can be switched repeatedly between these phases. The different phases have distinctly d... Shape Memory Polymer Research [作者：Mather, PT; Luo, XF; Rousseau, IA,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：445-471 , 文章类型： Review，,卷期：2009年39-1] The past several years have witnessed significant advances in the field of shape memory polymers (SMPs) with the elucidation of new compositions for property tuning, the discovery of new mechanisms for shape fixing and r... Solid-Surface Characterization by Wetting [作者：Marmur, A,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：473-489 , 文章类型： Review，,卷期：2009年39-1] The current status of the theories that are required for characterization of solid surfaces by equilibrium contact angles is reviewed. Some important aspects, which are not yet completely understood, are explained and li... Recent Progress in Theoretical Prediction, Preparation, and Characterization of Layered Ternary Transition-Metal Carbides [作者：Wang, JY; Zhou, YC,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：415-443 , 文章类型： Review，,卷期：2009年39-1] Layered ternary carbides contain alternative stacking of structural slabs in the unit cells. Many mechanical and structural features are inherited with respect to their binary carbide counterparts, and some novel propert... Thin-Film Organic Electronic Devices [作者：Katz, HE; Huang, J,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：71-92 , 文章类型： Review，,卷期：2009年39-1] We review recently published advancements in thin-film organic devices, ranging from the composition and properties of organic materials to be used in devices, to the applications of devices, with special emphasis on thi... Immersion Lithography: Photomask and Wafer-Level Materials [作者：French, RH; Tran, HV,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：93-126 , 文章类型： Review，,卷期：2009年39-1] Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift fro... Porous pSiCOH Ultralow-k Dielectrics for Chip Interconnects Prepared by PECVD [作者：Grill, A,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：49-69 , 文章类型： Review，,卷期：2009年39-1] Porous pSiCOH materials with ultralow dielectric constants (ulk) have been developed with dielectric constants reaching values below 2.0. The pSiCOH films, composed of Si, C, O, and H atoms, are prepared by plasma-assist... Size-Dependent Resistivity in Nanoscale Interconnects [作者：Josell, D; Brongersma, SH; Tokei, Z,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：231-254 , 文章类型： Review，,卷期：2009年39-1] As the dimensions of conductors shrink into the nanoscale, their electrical conductivity becomes dependent on their size even at room temperature. Although the behavior varies dramatically as temperatures increase from n... Materials for Optical Lithography Tool Application [作者：Sewell, H; Mulkens, J,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：127-153 , 文章类型： Review，,卷期：2009年39-1] This review of materials development for optical lithography covers two materials for optical steppers and scanners, and materials for EUV lithography. In the former, materials development for advanced immersion lenses a... Nanoimprint Lithography Materials Development for Semiconductor Device Fabrication [作者：Costner, EA; Lin, MW; Jen, WL; Willson, CG,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：155-180 , 文章类型： Review，,卷期：2009年39-1] The term nanoimprint lithographs, (NIL) describes a number of processes used to form nanoscale structures by molding or embossing. Step and flash imprint lithography (S-FIL, a trademark of Molecular Imprints, Inc.) is a ... High-kappa/Metal Gate Science and Technology [作者：Guha, S; Narayanan, V,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：181-202 , 文章类型： Review，,卷期：2009年39-1] High-kappa/metal gate technology is on the verge of replacing conventional oxynitride dielectrics in state-of-the-art transistors for both high-performance and low-power applications. In this review we discuss some of th... Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs [作者：Chu, M; Sun, YK; Aghoram, U; Thompson, SE,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：203-229 , 文章类型： Review，,卷期：2009年39-1] Metal-oxide-semicondutor field-effect transistors (MOSFETs) have shown impressive performance improvements over the past 10 years by incorporating strained silicon (Si) technology. This review gives an overview of the im... Carbon Nanotube Interconnects [作者：Naeemi, A; Meindl, JD,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：255-275 , 文章类型： Review，,卷期：2009年39-1] The performance and power dissipation of integrated circuits (IC) arc largely affected by interconnects. Carbon nanotubes, which are rolls of one-atom-thick carbon sheets, show great potential in addressing some of the m... Materials for Magnetoresistive Random Access Memory [作者：Slaughter, JM,期刊：ANNUAL REVIEW OF MATERIALS RESEARCH, 页码：277-296 , 文章类型： Review，,卷期：2009年39-1] MRAM technology is based on the storage of data in stable magnetic states using devices that have a large magnetoresistance effect, so that the data can be read by determining the resistance of the device. MRAM is inhere...