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[摘要]：High-kappa/metal gate technology is on the verge of replacing conventional oxynitride dielectrics in state-of-the-art transistors for both high-performance and low-power applications. In this review we discuss some of the key materials issues that complicated the introduction of high-kappa di-electrics, including, reduced electron mobility, oxygen-based thermal instabilities, and the absence of thermally stable dual-metal electrodes. We show that through a combination of materials innovations and engineering ingenuity these issues were successfully overcome, thereby paving the way for high-kappa/metal gate implementation. |
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