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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共53条记录   Rapid, substrate-independent thickness determination of large area graphene layers - art. no. 234106 [作者：Venkatachalam, DK; Parkinson, P; Ruffell, S; Elliman, RG,期刊：Applied Physics Letters, 页码：34106-34106 , 文章类型： Article，,卷期：2011年99-23] Phase-shifting interferometric imaging is shown to be a powerful analytical tool for studying graphene films, providing quantitative analysis of large area samples with an optical thickness resolution of <= 0.05 nm. The ... Temperature stability of Bloch surface wave biosensors - art. no. 231107 [作者：Michelotti, F; Descrovi, E,期刊：Applied Physics Letters, 页码：31107-31107 , 文章类型： Article，,卷期：2011年99-23] We report on the experimental characterization of the thermal sensitivity of biosensors based on the coupling of Bloch surface waves (BSW) on amorphous silicon nitride/silicon one dimensional photonic crystals (1DPC). Th... Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal - art. no. 232909 [作者：Liu, WH; Pey, KL; Wu, X; Raghavan, N; Padovani, A; Larcher, L; Vandelli, L; Bosman, M; Kauerauf, T,期刊：Applied Physics Letters, 页码：32909-32909 , 文章类型： Article，,卷期：2011年99-23] The resistive switching mechanism, which is crucial for the operations of resistive random access memory (RRAM) devices, is investigated using HfO2 based MOSFETs. After the SET operation, MOSFETs exhibit a threshold volt... Two-photon focal modulation microscopy in turbid media - art. no. 233702 [作者：Si, K; Gong, W; Chen, NG; Sheppard, CJR,期刊：Applied Physics Letters, 页码：33702-33702 , 文章类型： Article，,卷期：2011年99-23] The image formation of two-photon focal modulation microscopy (2PFMM) in turbid media is theoretically investigated. The results show that compared with conventional two-photon fluorescence microscopy, the ballistic exci... Unintentional doping induced splitting of G peak in bilayer graphene - art. no. 233110 [作者：Lin, SS; Chen, BG; Pan, CT; Hu, S; Tian, P; Tong, LM,期刊：Applied Physics Letters, 页码：33110-33110 , 文章类型： Article，,卷期：2011年99-23] Raman characterizations show the G peak of an unintentional doped single crystal bilayer graphene (BLG) splits into two peaks: S and AS peaks. From the relative shift between S and AS peaks, the doping concentration is e... Local contact potential difference of molecular self-assemblies investigated by Kelvin probe force microscopy - art. no. 233102 [作者：Spadafora, EJ; Linares, M; Yahya, WZN; Lincker, F; Demadrille, R; Grevin, B,期刊：Applied Physics Letters, 页码：33102-33102 , 文章类型： Article，,卷期：2011年99-23] Self-assembled pi-conjugated oligomer nanowires have been investigated by frequency modulation atomic force microscopy and amplitude modulation Kelvin probe force microscopy under ultra high vacuum. The distance dependen... Low-field mobility in ultrathin silicon nanowire junctionless transistors - art. no. 233509 [作者：Soree, B; Magnus, W; Vandenberghe, W,期刊：Applied Physics Letters, 页码：33509-33509 , 文章类型： Article，,卷期：2011年99-23] We theoretically investigate the phonon, surface roughness and ionized impurity limited low-field mobility of ultrathin silicon n-type nanowire junctionless transistors in the long channel approximation with wire radii r... X-ray nanodiffraction of tilted domains in a poled epitaxial BiFeO3 thin film - art. no. 232903 [作者：Hruszkewycz, SO; Folkman, CM; Highland, MJ; Holt, MV; Baek, SH; Streiffer, SK; Baldo, P; Eom, CB; Fuoss, PH,期刊：Applied Physics Letters, 页码：32903-32903 , 文章类型： Article，,卷期：2011年99-23] We present measurements of crystallographic domain tilts in a (001) BiFeO3 thin film using focused beam x-ray nanodiffraction. Films were ferroelectrically pre-poled with an electric field orthogonal and parallel to as-g... Intra-excitonic relaxation dynamics in ZnO - art. no. 231910 [作者：Chernikov, A; Koch, M; Laumer, B; Wassner, TA; Eickhoff, M; Koch, SW; Chatterjee, S,期刊：Applied Physics Letters, 页码：31910-31910 , 文章类型： Article，,卷期：2011年99-23] The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions ... Vacancies, twins, and the thermal stability of ultrafine-grained copper - art. no. 231911 [作者：Saldana, C; King, AH; Stach, EA; Compton, WD; Chandrasekar, S,期刊：Applied Physics Letters, 页码：31911-31911 , 文章类型： Article，,卷期：2011年99-23] Ultrafine-grained metals have impressive strength but lack the thermal stability necessary for most applications. Nano-scale, deformation twinned copper microstructures exhibit a rare combination of strength and stabilit... X-ray radiation effects in multilayer epitaxial graphene - art. no. 232102 [作者：Hicks, J; Arora, R; Kenyon, E; Chakraborty, PS; Tinkey, H; Hankinson, J; Berger, C; de Heer, WA; Conrad, EH; Cressler, JD,期刊：Applied Physics Letters, 页码：32102-32102 , 文章类型： Article，,卷期：2011年99-23] We characterize multilayer graphene grown on C-face SiC before and after exposure to a total ionizing dose of 12 Mrad(SiO2) using a 10 keV x-ray source. While we observe the partial peeling of the top graphene layers and... Irregular spectral position of E parallel to c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 - art. no. 232114 [作者：Mauder, C; Lutsenko, EV; Rzheutski, MV; Reuters, B; Zubialevich, VZ; Pavlovskii, VN; Yablonskii, GP; Heuken, M; Kalisch, H; Vescan, A,期刊：Applied Physics Letters, 页码：32114-32114 , 文章类型： Article，,卷期：2011年99-23] Polarized temperature dependent photoluminescence (PL) and room temperature (RT) photocurrent spectra of m-plane InGaN/GaN multiple quantum wells grown on LiAlO2 with In content x(In) = 5%-30% were studied. As expected, ... Study of slow oxide trap creating random telegraph noise within a gate edge overlap region in inversion mode - art. no. 232904 [作者：Cho, HJ; Son, Y; Jang, S; Shin, H,期刊：Applied Physics Letters, 页码：32904-32904 , 文章类型： Article，,卷期：2011年99-23] We investigated a slow oxide trap causing a random telegraph noise (RTN) within a gate edge overlap region in an inversion mode at metal/high-k dielectric nMOSFETs. The oxide trap was observed to generate RTN only in gat... Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition - art. no. 232106 [作者：Klein, D; Kunst, M,期刊：Applied Physics Letters, 页码：32106-32106 , 文章类型： Article，,卷期：2011年99-23] Electrical passivation induced by a silicon carbide coating deposited on mono-crystalline silicon substrate was investigated by means of photo-conductivity measurements. Roles of the fixed charges and surface defects wer... Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-based organic, ultrathin, and transparent sound-emitting device - art. no. 233503 [作者：Tian, H; Xie, D; Yang, Y; Ren, TL; Feng, TT; Wang, YF; Zhou, CJ; Peng, PG; Wang, LG; Liu, LT,期刊：Applied Physics Letters, 页码：33503-33503 , 文章类型： Article，,卷期：2011年99-23] An organic, ultrathin, and transparent sound-emitting device was fabricated using poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic) (PEDOT:PSS) films. This sound-emitting device was easily processed by spin coating... Time- and vector-resolved Kerr microscopy of hard disk writers - art. no. 232503 [作者：Gangmei, P; Keatley, PS; Yu, W; Hicken, RJ; Gubbins, MA; Czoschke, PJ; Lopusnik, R,期刊：Applied Physics Letters, 页码：32503-32503 , 文章类型： Article，,卷期：2011年99-23] Time-resolved scanning Kerr microscopy has been used to make wafer level measurements of magnetization dynamics within the yoke and pole piece of partially built hard disk writer structures. Three Cartesian components of...