Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition - art. no. 232106

[摘要]：Electrical passivation induced by a silicon carbide coating deposited on mono-crystalline silicon substrate was investigated by means of photo-conductivity measurements. Roles of the fixed charges and surface defects were compared with silicon nitride coating. The passivation mechanisms were found to be the same as for silicon nitride but a smaller number of fixed charges in the range of the silicon oxide was calculated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665617]

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