个性化文献订阅>文章检索

文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共91条记录   lambda(3)/1000 Plasmonic Nanocavities for Biosensing Fabricated by Soft UV Nanoimprint Lithography [作者：Cattoni, A; Ghenuche, P; Haghiri-Gosnet, AM; Decanini, D; Chen, J; Pelouard, JL; Collin, S,期刊：Nano Letters, 页码：3557-3563 , 文章类型： Article，,卷期：2011年11-9] Arrays of plasmonic nanocavities with very low volumes, down to lambda(3)/1000, have been fabricated by soft UV nanoimprint lithography. Nearly perfect omnidirectional absorption (3-70 degrees) is demonstrated for the fu... Pressure-Mediated Doping in Graphene [作者：Nicolle, J; Machon, D; Poncharal, P; Pierre-Louis, O; San-Miguel, A,期刊：Nano Letters, 页码：3564-3568 , 文章类型： Article，,卷期：2011年11-9] Exfoliated graphene and few layer graphene samples supported on SiO2 have been studied by Raman spectroscopy at high pressure. For samples immersed on a alcohol mixture, an electron transfer of partial derivative n/parti... Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates [作者：Svensson, J; Lindahl, N; Yun, H; Seo, M; Midtvedt, D; Tarakanov, Y; Lindvall, N; Nerushev, O; Kinaret, J; Lee, S; Campbell, EEB,期刊：Nano Letters, 页码：3569-3575 , 文章类型： Article，,卷期：2011年11-9] Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, ... Ethylene Irradiation: A New Route to Grow Graphene on Low Reactivity Metals [作者：Martinez-Galera, AJ; Brihuega, I; Gomez-Rodriguez, JM,期刊：Nano Letters, 页码：3576-3580 , 文章类型： Article，,卷期：2011年11-9] A novel technique for growing graphene on relatively inert metals, consisting in the thermal decomposition of low energy ethylene ions irradiated on hot metal surfaces in ultrahigh vacuum, is reported. By this route, we ... Electronic Excited States in Bilayer Graphene Double Quantum Dots [作者：Volk, C; Fringes, S; Terres, B; Dauber, J; Engels, S; Trellenkamp, S; Stampfer, C,期刊：Nano Letters, 页码：3581-3586 , 文章类型： Article，,卷期：2011年11-9] We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions ac... Direct Visualization and Identification of Biofunctionalized Nanoparticles using a Magnetic Atomic Force Microscope [作者：Block, S; Glockl, G; Weitschies, W; Helm, CA,期刊：Nano Letters, 页码：3587-3592 , 文章类型： Article，,卷期：2011年11-9] Because of its outstanding ability to image and manipulate single molecules, atomic force microscopy (AFM) established itself as a fundamental technique in nanobiotechnology.(1) We present a new modality that distinguish... Two-Level Conductance Fluctuations of a Single-Molecule Junction [作者：Neel, N; Kroger, J; Berndt, R,期刊：Nano Letters, 页码：3593-3596 , 文章类型： Article，,卷期：2011年11-9] The conductance of a single-molecule junction in a low-temperature scanning tunneling microscope has been measured at nanosecond time resolution. In a transition region between tunneling and contact the conductance exhib... Graphene Transistors Are Insensitive to pH Changes in Solution [作者：Fu, WY; Nef, C; Knopfrnacher, O; Tarasov, A; Weiss, M; Calame, M; Schonenberger, C,期刊：Nano Letters, 页码：3597-3600 , 文章类型： Article，,卷期：2011年11-9] We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based i... Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene [作者：Hollander, MJ; LaBella, M; Hughes, ZR; Zhu, M; Trumbull, KA; Cavalero, R; Snyder, DW; Wang, XJ; Hwang, E; Datta, S; Robinson, JA,期刊：Nano Letters, 页码：3601-3607 , 文章类型： Article，,卷期：2011年11-9] We explore the effect of high-kappa dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utiliz... Morphology and Temperature Dependence of the Thermal Conductivity of Nanoporous SiGe [作者：He, YP; Donadio, D; Galli, G,期刊：Nano Letters, 页码：3608-3611 , 文章类型： Article，,卷期：2011年11-9] Using molecular dynamics simulations, we show that the thermal conductivity (kappa) of Si0.5Ge0.5 can be reduced by more than one order of magnitude by etching nanometer-sized holes in the material, and it becomes almost... Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition [作者：Su, CY; Lu, AY; Wu, CY; Li, YT; Liu, KK; Zhang, WJ; Lin, SY; Juang, ZY; Zhong, YL; Chen, FR; Li, LJ,期刊：Nano Letters, 页码：3612-3616 , 文章类型： Article，,卷期：2011年11-9] Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO2 is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chem... Bringing Order to the World of Nanowire Devices by Phase Shift Lithography [作者：Subannajui, K; Guder, F; Zacharias, M,期刊：Nano Letters, 页码：3513-3518 , 文章类型： Article，,卷期：2011年11-9] Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on... Synthesis and Characterization of Large-Area Graphene and Graphite Films on Commercial Cu-Ni Alloy Foils [作者：Chen, SS; Cai, WW; Piner, RD; Suk, JW; Wu, YP; Ren, YJ; Kang, JY; Ruoff, RS,期刊：Nano Letters, 页码：3519-3525 , 文章类型： Article，,卷期：2011年11-9] Controlling the thickness and uniformity during growth of multilayer graphene is an important goal. Here we report the synthesis of large-area monolayer and multilayer, particularly bilayer, graphene films on Cu-Ni alloy... Monolithic Integration of Continuously Tunable Plasmonic Nanostructures [作者：Lindquist, NC; Johnson, TW; Norris, DJ; Oh, SH,期刊：Nano Letters, 页码：3526-3530 , 文章类型： Article，,卷期：2011年11-9] We demonstrate precise three-dimensional integration of smooth bumps, grooves, and apertures in optically thick metal films using template stripping. Patterned silicon wafers are used as high-quality, reusable templates.... Shape Matters: Plasmonic Nanoparticle Shape Enhances Interaction with Dielectric Substrate [作者：Albella, P; Garcia-Cueto, B; Gonzalez, F; Moreno, F; Wu, PC; Kim, TH; Brown, A; Yang, Y; Everitt, HO; Videen, G,期刊：Nano Letters, 页码：3531-3537 , 文章类型： Article，,卷期：2011年11-9] Numerical analyses of the ultraviolet and visible plasmonic spectra measured from hemispherical gallium nanostructures on dielectric substrates reveal that resonance frequencies are quite sensitive to illumination angle ... Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces [作者：Teichmann, K; Wenderoth, M; Loth, S; Garleff, JK; Wijnheijmer, AP; Koenraad, PM; Ulbrich, RG,期刊：Nano Letters, 页码：3538-3542 , 文章类型： Article，,卷期：2011年11-9] In gated semiconductor devices, the space charge layer that is located under the gate electrode acts as the functional element. With increasing gate voltage, the microscopic process forming this space charge layer involv...