个性化文献订阅>期刊> Nano Letters
 

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

  作者 Hollander, MJ; LaBella, M; Hughes, ZR; Zhu, M; Trumbull, KA; Cavalero, R; Snyder, DW; Wang, XJ; Hwang, E; Datta, S; Robinson, JA  
  选自 期刊  Nano Letters;  卷期  2011年11-9;  页码  3601-3607  
  关联知识点  
 

[摘要]We explore the effect of high-kappa dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-kappa

 
      被申请数(0)  
 

[全文传递流程]

一般上传文献全文的时限在1个工作日内