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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共61条记录   Microscopic investigation of the CdS buffer layer growth on Cu(In,Ga)Se-2 absorbers [作者：Sadewasser, S; Bremsteller, W; Plake, T; Kaufmann, CA; Pettenkofer, C,期刊：Journal Of Vacuum Science & Technology B, 页码：901-903 , 文章类型： Article，,卷期：2008年26-3] To obtain highly efficient thin film solar cell devices, a thin buffer layer of CdS is deposited onto a Cu(In,Ga)Se-2 absorber layer. Here, the authors report a photoemission electron microscopy study investigating the g... Effect of substrate temperature on structural and electrical properties of liquid-delivery metal organic chemical vapor deposited indium oxide thin films on silicon [作者：Venkat, S; Pammi, N; Sahu, BS; Seong, NJ; Yoon, SG,期刊：Journal Of Vacuum Science & Technology B, 页码：909-913 , 文章类型： Article，,卷期：2008年26-3] Indium oxide conducting films were deposited on p-type Si (100) substrates at various temperatures by a liquid-delivery metal organic chemical vapor deposition technique using indium (III) tris(2,2,6,6-tetramethyl-3,5-he... Controllable fabrication of the micropore shape of two-dimensional photonic crystals using holographic lithography [作者：Hsieh, ML; Lan, YS,期刊：Journal Of Vacuum Science & Technology B, 页码：914-917 , 文章类型： Article，,卷期：2008年26-3] In this study, the micropore shape of two-dimensional (2D) photonic crystal structures can be modified and controlled by the intensity ratio of the incident beams of the holographic lithography. By adjusting the intensit... Field emission for cantilever sensors [作者：Yang, CK; le Febre, AJ; Pandraud, G; van der Drift, E; French, PJ,期刊：Journal Of Vacuum Science & Technology B, 页码：927-933 , 文章类型： Article，,卷期：2008年26-3] Field emission provides an alternative sensing solution in scaled electromechanical systems and devices, when typical displacement detection techniques fail in submicron and nanodimenions. Apart from its independency fro... Ion beam machining of Si layer deposited on Zerodur (R) substrate [作者：Kurashima, Y; Tajima, T; Miyamoto, I; Ando, M; Numata, A,期刊：Journal Of Vacuum Science & Technology B, 页码：934-938 , 文章类型： Article，,卷期：2008年26-3] Ion beam figuring is suitable for the final correction of the surface figure error of aspherical substrates using an extreme ultraviolet lithography tool. In ion beam figuring, however, the machined surfaces of substrate... Electron beam induced deposition of iron nanostructures [作者：Hochleitner, G; Wanzenboeck, HD; Bertagnolli, E,期刊：Journal Of Vacuum Science & Technology B, 页码：939-944 , 文章类型： Article，,卷期：2008年26-3] Electron beam induced deposition is among the most prospective methods for size- and position-controllable nanofabrication of three-dimensional structures. Direct-write maskless nanostructure fabrication was performed wi... Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures [作者：Song, H; Lee, T; Choi, NJ; Lee, H,期刊：Journal Of Vacuum Science & Technology B, 页码：904-908 , 文章类型： Article，,卷期：2008年26-3] Systematic electronic transport measurements in nanometer-scale junctions containing self-assembled monolayers of alkyl molecules are reported using nanowell device structures. The comprehensive temperature-variable curr... High-power, narrow-ridge, mid-infrared interband cascade lasers [作者：Canedy, CL; Kim, CS; Kim, M; Larrabee, DC; Nolde, JA; Bewley, WW; Vurgaftman, I; Meyer, JR,期刊：Journal Of Vacuum Science & Technology B, 页码：1160-1162 , 文章类型： Article，,卷期：2008年26-3] Two ten-stage interband cascade laser structures were grown by solid-source molecular beam epitaxy. The wafers were processed into both broad-area ridges for threshold characterization and Au-electroplated narrow ridges ... InGaAlAs/InGaAs strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions [作者：Feng, DJY; Chiu, CL; Lin, SH; Lay, TS; Chang, TY,期刊：Journal Of Vacuum Science & Technology B, 页码：1163-1166 , 文章类型： Article，,卷期：2008年26-3] We report the design, growth, and fabrication of strain-balanced n-type modulation-doped InGaAlAs/InGaAs multiple quantum well laser/semiconductor optical amplifiers on InP. The quantum well contains a lattice-matched In... Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems [作者：Anselm, KA; Hwang, WY; Ren, HW; Zhang, D; Um, J,期刊：Journal Of Vacuum Science & Technology B, 页码：1167-1170 , 文章类型： Article，,卷期：2008年26-3] Molecular beam epitaxy (MBE) was used to grow ridge-waveguide distributed feedback (DFB) lasers for uncooled coarse wavelength division multiplexing applications. The lasers covered a wavelength range from 1270 to 1610 n... Microelectromechanical system microhotplates for reliability testing of thin films and nanowires [作者：Aceros, JC; McGruer, NE; Adams, GG,期刊：Journal Of Vacuum Science & Technology B, 页码：918-926 , 文章类型： Article，,卷期：2008年26-3] Microelectromechanical system microhotplates fabricated using silicon-on-insulator wafers were designed and fabricated for accelerated lifetime testing of thin films and nanowires. Thin films of Cr/Ru/Au, Cr/Ru, and Ru w... Resistivity and surface states density of n- and p-type silicon nanowires [作者：Vaurette, F; Nys, JP; Deresmes, D; Grandidier, B; Stievenard, D,期刊：Journal Of Vacuum Science & Technology B, 页码：945-948 , 文章类型： Article，,卷期：2008年26-3] The resistivity and the density of surface states of semiconductor nanowires are not measurable using classic electrical measurements such as capacitance-voltage techniques, because of too low capacitance associated with... Probe current, probe size, and the practical brightness for probe forming systems [作者：Bronsgeest, MS; Barth, JE; Swanson, LW; Kruit, P,期刊：Journal Of Vacuum Science & Technology B, 页码：949-955 , 文章类型： Article，,卷期：2008年26-3] Probe size, shape, and current are important parameters for the performance of all probe forming systems such as the scanning (transmission) electron microscope, the focused ion beam microscope, and the Gaussian electron... Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots [作者：Tseng, CC; Chou, ST; Chen, YH; Chung, TH; Lin, SY; Wu, MC,期刊：Journal Of Vacuum Science & Technology B, 页码：956-958 , 文章类型： Article，,卷期：2008年26-3] In this article, we report the growth of InAs/GaAs quantum dots (QDs) grown under different As-4-supply procedures. The growth of the investigated samples carried out by the three procedures of As shutter always opened, ... Growth and characterization of ZnxCd1-xSe/Znx ' Cdy ' Mg1-x '-y ' Se asymmetric coupled quantum well structures for quantum cascade laser applications [作者：Charles, WO; Shen, A; Franz, K; Gmachl, C; Zhang, Q; Gong, Y; Neumark, GF; Tamargo, MC,期刊：Journal Of Vacuum Science & Technology B, 页码：1171-1173 , 文章类型： Article，,卷期：2008年26-3] The authors report the growth of a II-VI ZnxCd1-xSe/Znx'Cdy'Mg1-x'-y'Se asymmetric coupled quantum well (asymmetric-CQW) structure that was used to investigate the active region of an intersubband electroluminescence str... Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection [作者：Rowe, MA; Gansen, EJ; Greene, MB; Rosenberg, D; Harvey, TE; Su, MY; Hadfield, RH; Nam, SW; Mirin, RP,期刊：Journal Of Vacuum Science & Technology B, 页码：1174-1177 , 文章类型： Article，,卷期：2008年26-3] We describe the design of the epitaxial layers for an efficient, photon-number-determining detector that utilizes a layer of self-assembled quantum dots as an optically addressable gate in a field-effect transistor. Our ...