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[摘要]：Indium oxide conducting films were deposited on p-type Si (100) substrates at various temperatures by a liquid-delivery metal organic chemical vapor deposition technique using indium (III) tris(2,2,6,6-tetramethyl-3,5-heptanedionato) (dpm)(3) precursors. The structural, morphological, and chemical bonding features of these films were studied by x-ray diffraction, scanning electron microscopy, and x-ray photoelectron spectroscopy. The effect of substrate temperature on the electrical and structural properties has been investigated to obtain a high mobility and highly conducting In2O3 film. All deposited films within the temperature range of 200-400 degrees C have a [111] preferred orientation and exhibit an increase of grain size from 21 to 33 nm with increasing deposition temperature. In this range of deposition temperature, there is no metallic indium phase in deposited films. It was observed that the electrical properties of the films are closely related to the microstructure of the films. Hall mobility and electrical resistivity values of the films are comparable to most of the presently investigated transparent conducting oxide films. (C) 2008 American Vacuum Society. |
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