- Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System
[作者:Raffo, A; Di Falco, S; Vadala, V; Vannini, G,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:2490-2496 , 文章类型: Article,,卷期:2010年58-9]
- In this paper, the experimental characterization of low-frequency dispersion (i.e., long-term memory effects) affecting microwave GaN HEMTs is carried out by adopting a new nonlinear measurement system, which is based on...
- Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
[作者:Wang, SC; Su, P; Chen, KM; Liao, KH; Chen, BY; Huang, SY; Hung, CC; Huang, GW,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:2319-2325 , 文章类型: Article,,卷期:2010年58-9]
- In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff ...
- Microwave Power Limiting Devices Based on the Semiconductor-Metal Transition in Vanadium-Dioxide Thin Films
[作者:Givernaud, J; Crunteanu, A; Orlianges, JC; Pothier, A; Champeaux, C; Catherinot, A; Blondy, P,期刊:IEEE Transactions on Microwave Theory and Techniques, 页码:2352-2361 , 文章类型: Article,,卷期:2010年58-9]
- We present a novel concept of microwave (MW) power-limiting devices based on reversible semiconductor-to-metal transition (SMT) of vanadium-dioxide thin films integrated on coplanar waveguides. We designed, simulated, an...
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