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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共96条记录   Fano resonance in two-intersecting nanorings: Multiple layers of plasmon hybridizations [作者：Liu, HL; Wu, XJ; Li, B; Xu, CX; Zhang, GB; Zheng, LJ,期刊：Applied Physics Letters, 页码：153114-153114 , 文章类型： Article，,卷期：2012年100-15] We theoretically investigate the optical properties of two-intersecting nanorings (TINR), which exhibit a pronounced Fano resonance in the near-infrared region. A multiple-layer plasmon hybridization model is proposed to... The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition [作者：Liu, H; Xu, K; Zhang, XJ; Ye, PD,期刊：Applied Physics Letters, 页码：152115-152115 , 文章类型： Article，,卷期：2012年100-15] We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ... Tunable terahertz optical antennas based on graphene ring structures [作者：Liu, PH; Cai, W; Wang, L; Zhang, XZ; Xu, JJ,期刊：Applied Physics Letters, 页码：153111-153111 , 文章类型： Article，,卷期：2012年100-15] Highly tunable optical antennas in teraherz range based on graphene ring structures are proposed, which employ graphene plasmons instead of traditional metallic plasmons. The plasmon resonances of the perfect graphene ri... Electrokinetic effects on detection time of nanowire biosensor [作者：Liu, YL; Guo, QJ; Wang, SQ; Hu, W,期刊：Applied Physics Letters, 页码：153502-153502 , 文章类型： Article，,卷期：2012年100-15] We develop a multiphysics model to study the contribution of electrokinetics on the biomolecular detection process and provide a physical explanation of the two to three orders of magnitude difference in detection time b... ZnO-based one diode-one resistor device structure for crossbar memory applications [作者：Liu, ZJ; Gan, JY; Yew, TR,期刊：Applied Physics Letters, 页码：153503-153503 , 文章类型： Article，,卷期：2012年100-15] This letter reports the development of a ZnO-based one diode-one resistor (1D1R) device consisting of a Pt/ZnO:Al/ZnO/Pt Schottky-type diode and a Pt/ZnO/Pt memristor using a room-temperature sputtering process. The prop... Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress [作者：Lo, WH; Chang, TC; Tsai, JY; Dai, CH; Chen, CE; Ho, SH; Chen, HM; Cheng, O; Huang, CT,期刊：Applied Physics Letters, 页码：152102-152102 , 文章类型： Article，,卷期：2012年100-15] This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the deg... Single atom identification by energy dispersive x-ray spectroscopy [作者：Lovejoy, TC; Ramasse, QM; Falke, M; Kaeppel, A; Terborg, R; Zan, R; Dellby, N; Krivanek, OL,期刊：Applied Physics Letters, 页码：154101-154101 , 文章类型： Article，,卷期：2012年100-15] Using aberration-corrected scanning transmission electron microscope and energy dispersive x-ray spectroscopy, single, isolated impurity atoms of silicon and platinum in monolayer and multilayer graphene are identified. ... Formation of coupled three-dimensional GeSi quantum dot crystals [作者：Ma, YJ; Zhong, Z; Lv, Q; Zhou, T; Yang, XJ; Fan, YL; Wu, YQ; Zou, J; Jiang, ZM,期刊：Applied Physics Letters, 页码：153113-153113 , 文章类型： Article，,卷期：2012年100-15] Coupled three-dimensional GeSi quantum dot crystals (QDCs) are realized by multilayer growth of quantum dots (QDs) on patterned SOI (001) substrates. Photoluminescence spectra of these QDCs show non-phonon (NP) recombina... Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface [作者：Matsuoka, T; Vlasenko, LS; Vlasenko, MP; Sekiguchi, T; Itoh, KM,期刊：Applied Physics Letters, 页码：152107-152107 , 文章类型： Article，,卷期：2012年100-15] A paramagnetic recombination center having an orthorhombic symmetry with g[110] = 2.0095(2), g[001] = 2.0038(2), and g[(1) over bar 10] = 2.0029(2) is found at the interface between silicon and native oxide. The center i... Stark shifts and exciton dissociation in CdSe nanoparticle grafted conjugated polymer [作者：Mehata, MS,期刊：Applied Physics Letters, 页码：151908-151908 , 文章类型： Article，,卷期：2012年100-15] Electroabsorption (E-A) and electrophotoluminescence (E-PL) responses of polymer films of CdSe quantum dots (QDs) incorporated sulfide-substituted poly(1,4-phenylene vinylene) derivative CdSe-S3PPV were measured. The obs... Electrocaloric effect in low-crystallinity ferroelectric polymers [作者：Moreira, RL,期刊：Applied Physics Letters, 页码：152901-152901 , 文章类型： Article，,卷期：2012年100-15] The role of the sample crystallinity on the electrocaloric effect (ECE) of ferroelectric polymers was investigated in miscible blends of poly(vinylidene fluoride-trifluoroethylene) and poly(methyl methacrylate). Polariza... Timing performance of 30-nm-wide superconducting nanowire avalanche photodetectors [作者：Najafi, F; Marsili, F; Dauler, E; Molnar, RJ; Berggren, KK,期刊：Applied Physics Letters, 页码：152602-152602 , 文章类型： Article，,卷期：2012年100-15] We investigated the timing jitter of superconducting nanowire avalanche photodetectors (SNAPs, also referred to as cascade-switching superconducting single-photon detectors) based on 30-nm-wide nanowires. At bias current... Nucleation of metals by strong electric fields [作者：Nardone, M; Karpov, VG,期刊：Applied Physics Letters, 页码：151912-151912 , 文章类型： Article，,卷期：2012年100-15] Recent work on phase transitions in chalcogenides (underlying phase change memory) led to a theory of symmetry-breaking field effects, predicting needle-shaped metallic nuclei and exponentially accelerated nucleation rat... Mn2PtIn: A tetragonal Heusler compound with exchange bias behavior [作者：Nayak, AK; Shekhar, C; Winterlik, J; Gupta, A; Felser, C,期刊：Applied Physics Letters, 页码：152404-152404 , 文章类型： Article，,卷期：2012年100-15] The structural and magnetic properties of a tetragonal Heusler compound Mn2PtIn are reported. Low temperature (5 K) magnetic measurements of the material show a hard magnetic behavior with relatively low saturation magne... Impurity-limited mobility and variability in gate-all-around silicon nanowires [作者：Niquet, YM; Mera, H; Delerue, C,期刊：Applied Physics Letters, 页码：153119-153119 , 文章类型： Article，,卷期：2012年100-15] We discuss the scattering of electrons and holes by charged dopant impurities in < 001 >, < 110 >, and < 111 > gate-all-around silicon nanowires (Si NWs) with diameters in the 2-8 nm range. We show that the mobility of m... Coincident site lattice-matched InGaN on (111) spinel substrates [作者：Norman, AG; Dippo, PC; Moutinho, HR; Simon, J; Ptak, AJ,期刊：Applied Physics Letters, 页码：152106-152106 , 文章类型： Article，,卷期：2012年100-15] Coincident site lattice-matched wurtzite (0001) In0.31Ga0.69N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl2O4 spinel substrate. The coincident site l...