[摘要]：Heteroepitaxial ZnO transparent current spreading layers with low sheet resistances were deposited on GaN-based light emitting diodes using aqueous solution phase epitaxy at temperatures below 90 degrees C. The performance of the LEDs was analyzed and compared to identical devices using electron-beam evaporated indium tin oxide transparent current spreading layers. White LEDs with ZnO layers provided high luminous efficacy-157 lm/W at 0.5A/cm(2), and 84.8 lm/W at 35A/cm(2), 24% and 50% higher, respectively, than devices with ITO layers. The improvement appears to be due to the enhanced current spreading and low optical absorption provided by the ZnO. (C) 2011 Optical Society of America
