[摘要]：The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n = 1) to (n = 2) relaxation is clearly identified at low excitation densities and lattice temperatures with a characteristic time constant of 6 +/- 0.5 ps. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3668102]
