[摘要]：We have performed low frequency 1/f noise measurements from 85K to 450K to investigate the energy distribution of defects in GaN/AlGaN high electron mobility transistors fabricated in three different processes. The noise is well described by the model of P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 (1981). A peak in the defect energy distribution is observed at similar to 0.2 eV for all device types investigated, which we attribute to the reconfiguration of an oxygen DX-like center in AlGaN. An additional peak at an energy > 1 eV is observed for devices grown under nitrogen-rich conditions, which we attribute to the reconfiguration energy of negatively charged nitrogen antisites. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662041]
