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[摘要]：With the aim of facilitating the high performance printed In-Ga-Zn-O (IGZ-O) thin-film transistors (TFTs), we present the heretofore unrecognized chemical methodology for tailoring the chemical structures of printable IGZO semiconductors through incorporation of ethylene glycol in sol-gel derived precursor solutions. With the optimal composition of ethylene glycol, the device performance of TFT employing the printed IGZO semiconducting layer annealed at 400 degrees C is significantly improved with the field-effect saturation mobility of 4.9 cm(2) V(-1) s(-1). In addition, by lowering the contact resistance between the source/drain electrode and printed IGZO semiconducting layer, the device performance is further improved with the field-effect saturation mobility of 7.6 cm(2) V(-1) s(-1) |
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