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[摘要]：It was found that slow highly charged ions had a high ability to ionize F atoms on a F/Si(100)-2 X 1 surface and desorb F(+) ions along the local bond direction. Actually, the F(+) ion yields were proportional to the incident charge cubed, and the F(+) ions were emitted along the Si-F bond directions showing a fourfold symmetry pattern. The trigger process of the F(+) formation is discussed based on a charge transfer process of F 2p electrons by extending the classical over barrier model. Further, we found that the kinetic energy of highly charged ion induced F(+) ions is lower than that of electron stimulated F(+) ions caused by the removal of a F 2s electron. |
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