Fabrication of phase-change chalcogenide Ge(2)Sb(2)Te(5) patterns by laser-induced forward transfer

[摘要]：Femtosecond laser pulses are focused on a thin film of Ge(2)Sb(2)Te(5) phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge(2)Sb(2)Te(5) film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. (C) 2011 Optical Society of America

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