[摘要]：Deeply etched Bragg gratings were fabricated by focused ion beam (FIB) milling in KGd(x)Lu(1-x)(WO(4))(2):Yb(3+) to obtain photonic cavity structures. By optimizing parameters such as dose per area, dwell time and pixel resolution the redeposition effects were minimized and grating structures more than 4 mu m in depth with an improved sidewall angle of similar to 5 degrees. were achieved. Fabry-Perot microcavities were defined and used to assess the optical performance of the grating structures at similar to 1530 nm. An on-chip integrated laser cavity at similar to 980 nm was achieved by defining a FIB reflective grating and FIB polished waveguide end-facet. With this cavity, an on-chip integrated waveguide laser in crystalline potassium double tungstate was demonstrated.
