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[摘要]：This feature article provides a brief overview of the latest developments in the solid state synthesis of various nitride, carbide and boride nanocrystals in an autoclave at mild temperatures. An additive assisted route was developed for nitride, carbide and boride nanocrystals. In the presence of S powder, 3C-SiC nanocrystals were obtained utilizing waste plastics and Si powder at 350-500 degrees C. With the assistance of I(2), rare-earth and alkaline-earth hexaboride nanocrystals were prepared at temperatures below 400 degrees C. As N-aminothiourea and iodine were added to the system containing Si and NaN(3), beta-Si(3)N(4) nanorods and alpha,beta-Si(3)N(4) nanoparticles could be prepared at 60 degrees C. A ternary nitride of MgSiN(2) can also be prepared at 350-500 degrees C using Si, Mg, and NaN(3) as reactants. |
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