[摘要]：The paper reviews the material requirements of microcrystalline silicon (mu c-Si) in terms of the device operation and configuration for thin film solar cells and thin film transistors (TFTs). We investigated the material properties of mu c-Si films deposited by using 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD) from a conventional H(2) dilution in SiH(4). Two types of intrinsic mu c-Si films deposited at the high pressure narrow electrode gap and the low pressure wide electrode gap were studied for the solar cell absorption layers. The material properties were characterized using dark conductivity, Raman spectroscopy, and transmission electron microscope (TEM) measurements. The mu c-Si quality and solar cell performance were mainly determined by microstructure characteristics. Solar cells adopting the optimized mu c-Si film demonstrated high stability with no significant changes in solar cell performance after air exposure for six months and subsequent illumination for over 300 h. The results can be explained that low ion bombardment and high atomic hydrogen density under the PECVD condition of the high pressure narrow electrode gap produce high-quality pc-Si films for solar cell application. (C) 2010 Elsevier B.V. All rights reserved.
