[摘要]：Atomic layer deposition (ALD) with subsequent annealing in N(2) gas flow was employed to fabricate an extensive series of both hexagonal and orthorhombic rare-earth manganate RMnO(3) thin films using R(thd)(3), Mn(thd)(3), and ozone as precursors. Excellent control of the R/Mn stoichiometry was achieved for all the rare-earth constituents studied at 275 degrees C. The formation of the metastable perovskites was elegantly enhanced through depositions on coherent perovskite substrates resulting in a complete series (from R = La to Lu) of single-phase RMnO(3) perovskites on LaAlO(3) substrates. The magnetic properties of the perovskite series exhibited expected antiferromagnetic behaviour at low temperatures (except for R = La which showed ferromagnetic interactions due to cation vacancies).
