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[摘要]：We have investigated the surface reaction mechanism during the atomic layer deposition (ALD) of SiO(2) from 3-aminopropyl triethoxysilane (APTES), 1-120, and O(3) using in situ attenuated total reflection Fourier-transform infrared spectroscopy. After the chemisorption of APTES on the SiO(2) surface, during the H(2)O cycle, the aminopropyl groups in APTES catalyze the hydrolysis of ethoxy ligands, leaving the surface terminated with OH groups-a reaction that would otherwise require an acidic or basic catalyst. O(3), in the subsequent cycle, combusts the remaining aminopropyl ligands, possibly producing combustion products such as CO, CO(2), H(2)O, and NO(x). Among these products CO reacts with surface OH groups to form monodentate formates and SiH on the surface. The formates and SiH groups produced during O(3) exposure along with the OH groups produced during H(2)O exposure serve APTES chemisorption, thus completing the entire ALD cycle. as the reactive sites for |
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