High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm - art. no. 032211

[摘要]：Platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing, drain-induced barrier lowering, a

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