Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering - art. no. 031201

[摘要]：Thin film transistors (TFTs) were fabricated with a zinc oxide (ZnO) channel deposited by ultralow-pressure sputtering (ULPS) at a pressure less than 1.3 x 10(-3) Pa. The field-effect mobility (mu(FE)) and the subthreshold gate swing (SS) of the ULPS-ZnO

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