A Whole-Chip ESD-Protected 0.14-pJ/p-mV 3.1-10.6-GHz Impulse-Radio UWB Transmitter in 0.18-mu m CMOS

[摘要]：This paper presents the design of a low-power single-full-band (3.1-10.6 GHz) noncarrier impulse-radio ultra-wideband (UWB) transmitter (TX) implemented in a commercial 0.18-mu m CMOS technology. This UWB TX features fifth-order Gaussian derivative pulse shaping, integrated binary phase-shift keying modulation and 2.5-kV whole-chip electrostatic discharge (ESD) protection. Measurement shows full function with a very small die size of 0.25 mm(2), extremely low power consumption of 0.14 pJ/p-mV, and an ultrashort pulsewidth of 394 ps. This ESD-protected UWB TX has the potential to support wireless streaming for gigabit/second applications.

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