A low-temperature parylene-to-silicon dioxide bonding technique for high-pressure microfluidics - art. no. 035011

[摘要]：We introduce a new low-temperature (280 degrees C) parylene-to-SiO2 bonding process with high device yield (>90%) for the fabrication and integration of high-pressure-rated microfluidic chips. Pull tests demonstrate a parylene-to-SiO2 bonding strength of

[全文传递流程]：

一般上传文献全文的时限在1个工作日内