Low-Capacitance Low-Voltage Triggered SCR ESD Clamp Using nMOS With Asymmetric Drain for RF ICs

[摘要]：A novel low-capacitance low-voltage triggered silicon-controlled rectifier (LC-LVTSCR) electrostatic discharge (ESD) clamp is proposed in a 0.13-mu m RF process. The proposed ESD clamp meets the ESD robustness and the RF requirement. The mechanism of the

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