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Split-Gate Organic Field Effect Transistors: Control Over Charge Injection and Transport

  作者 Hsu, BBY; Namdas, EB; Yuen, JD; Cho, SN; Samuel, DW; Heeger, AJ  
  选自 期刊  ADVANCED MATERIALS;  卷期  2010年22-41;  页码  4649-4653  
  关联知识点  
 

[摘要]A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.

 
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