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Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

  作者 Muenstermann, R; Menke, T; Dittmann, R; Waser, R  
  选自 期刊  ADVANCED MATERIALS;  卷期  2010年22-43;  页码  4819-4819  
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[摘要]Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe-doped SrTiO3 metal-insulator-metal structures and gain insight into the active switching interface. Both a filamentary and an area-dependent switching process with opposite switching polarities are found in the same sample.

 
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