[摘要]：Memory devices with high bit density and memory cells just 50-60 nm apart and a density of 10(10)cm(-2) - which is not achievable with the current silicon-based lithographic techniques - are fabricated using a self-assembled block-copolymer ordered nanostructure and selectively sequestered gold nanoparticles. This result brings the idea of molecular memories a step closer to reality.
