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Enhanced force sensitivity and noise squeezing in an electromechanical resonator coupled to a nanotransistor

  作者 Mahboob, I; Flurin, E; Nishiguchi, K; Fujiwara, A; Yamaguchi, H  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-25;  页码  253105-253105  
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[摘要]A nanofield-effect transistor (nano-FET) is coupled to a massive piezoelectricity based electromechanical resonator integrated with a parametric amplifier. The mechanical parametric amplifier can enhance the resonator's displacement and the resulting electrical signal is further amplified by the nano-FET. This hybrid amplification scheme yields an increase in the mechanical displacement signal by 70 dB resulting in a force sensitivity of 200 aN Hz(-1/2) at 3 K. The mechanical parametric amplifier can also squeeze the displacement noise in one oscillation phase by 5 dB enabling a factor of 4 reduction in the thermomechanical noise force level. (C) 2010 American Institute of Physics. [doi:10.1063/1.3528454]

 
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