[摘要]：The quantum dots (QDs) system has been intensively studied for decades owing to its huge potential for applications. In this Letter, we report a lateral photovoltaic effect (LPE) with a large sensitivity observed in CdSe QDs embedded structure of Zn/CdSe/Si. This result not only enriches applications of the QDs system but also opens a new window to study the carrier dynamics of the QDs system. (C) 2010 Optical Society of America
