Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering

[摘要]：We report a Raman scattering determination of the electron density in InN nanowires from the analysis of longitudinal optical-phonon-plasmon coupled modes. A Raman peak assigned to the L- coupled mode is observed in both undoped and doped InN nanowires. T

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