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Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures

作者	Bhat, TN; Roul, B; Rajpalke, MK; Kumar, M; Krupanidhi, SB; Sinha, N

选自	期刊 Applied Physics Letters; 卷期 2010年97-20; 页码 202107-202107

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[摘要]：The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These dots were found to be single crystal
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