Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers

[摘要]：Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers have been characterized by photoluminescence (PL) spectroscopy and a PL imaging microscopy. The PL emission wavelength of the three kinds of Frank-type defects were determined at simil

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