Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes

[摘要]：Demonstration of a transparent InGaZnO thin film transistor using a graphene composite as the transparent source/drain electrode is presented. Graphene growth was confirmed by Raman spectroscopy, showing all associated peaks at 1350, 1580, and 2700 cm(-1)

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