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Formation of epitaxial metastable NiGe2 thin film on Ge (100) by pulsed excimer laser anneal

  作者 Lim, PSY; Chi, DZ; Lim, PC; Wang, XC; Chan, TK; Osipowicz, T; Yeo, YC  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-18;  页码  182104-182104  
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[摘要]Epitaxial nickel digermanide (NiGe2), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe2 formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray d

 
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