个性化文献订阅>期刊> Applied Physics Letters
 

Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density

  作者 Issaoui, R; Achard, J; Silva, F; Tallaire, A; Tardieu, A; Gicquel, A; Pinault, MA; Jomard, F  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-18;  页码  182101-182101  
  关联知识点  
 

[摘要]The fabrication of diamond-based vertical power devices which are the most suited for high current applications requires the use of thick heavily boron-doped (B-doped) diamond single crystals. Although the growth of thin B-doped diamond films is well cont

 
      被申请数(0)  
 

[全文传递流程]

一般上传文献全文的时限在1个工作日内