Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

[摘要]：AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20% (10%) aluminum-content in double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on freestanding polar (c-plane) and nonpolar (m-plane) GaN substrates. RTDs wer

[全文传递流程]：

一般上传文献全文的时限在1个工作日内